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| AO4842 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4842 is Pb-free (meets ROHS & Sony 259 specifications). AO4842L is a Green Product ordering option. AO4842 and AO4842L are electrically identical. Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON) < 22m (VGS = 10V) RDS(ON) < 35m (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 20 7.5 6.4 30 2 1.44 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 50 82 41 Max 62.5 110 50 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4842 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=7.5A 10 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 20 18 26 28 24 0.77 1 4.3 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 118 85 0.8 12 VGS=10V, VDS=15V, ID=7.5A 6 2.1 3 4.5 VGS=10V, VDS=15V, RL=2, RGEN=3 IF=7.5A, dI/dt=100A/s 3.1 15.1 2.7 15.5 7.1 6.5 5 23 5 20 10 1.5 17 8 820 22 31 35 1.65 Min 30 0.004 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 35 30 25 20 15 10 0 5 10 VGS=4.5V 1.6 ID=7.5A Normalized On-Resistance 1.4 VGS=10V 5V 4.5V 6V 4V ID(A) 20 16 12 8 3.5V 4 VGS=3V 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V RDS(ON) (m) VGS=10V, VDS=15V, ID=7.4A 1.2 VGS=4.5V VGS=10V, VDS=15V, RL=2.0, RGEN=3 VGS=10V 0.8 1 IF=7.4A, dI/dt=100A/s 15 20 IF=7.4A, dI/dt=100A/s 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=7.5A 50 RDS(ON) (m) 40 125C 1.0E+01 1.0E+00 1.0E-01 IS (A) 125C 1.0E-02 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=7.5A Capacitance (pF) 1000 800 Ciss 600 400 200 0 0 Crss 5 10 15 20 25 30 Coss VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 50 40 10s 1ms VGS=10V, VDS=15V, ID=7.4A Power (W) 10ms 0.1s 30 20 10 0 0.001 100s TJ(Max)=150C TA=25C 10.0 ID (Amps) 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 1sGS=10V, V 10s DC VDS=15V, RL=2.0, RGEN=3 IF=7.4A, dI/dt=100A/s IF VDS (Volts)=7.4A, dI/dt=100A/s 10 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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